Investigation of Current Gain Degradation in 4H-SiC Power BJTs

被引：1
|
作者：
Buono, B. [1 ]
Ghandi, R. [1 ]
Domeij, M. [1 ]
Malm, G. [1 ]
Zetterling, C. -M. [1 ]
Ostling, M. [1 ]
机构：
[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
4H-SiC; BJT; degradation; current gain; temperature; RECOMBINATION; SICBJTS;
D O I：
10.4028/www.scientific.net/MSF.717-720.1131
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The current gain degradation of 4H-SiC BJTs with no significant drift of the on-resistance is investigated. Electrical stress on devices with different emitter widths suggests that the device design can influence the degradation behavior. Analysis of the base current extrapolated from the Gummel plot indicates that the reduction of the carrier lifetime in the base region could be the cause for the degradation of the gain. However, analysis of the base current of the base-emitter diode shows that the degradation of the passivation layer could also influence the reduction of the current gain.
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页码：1131 / 1134
页数：4
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