共 50 条
- [2] Unintentional doping in GaN assessed by scanning capacitance microscopy [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (05): : 896 - 898
- [3] Scanning capacitance microscopy as a tool for the assessment of unintentional doping in GaN [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S980 - S983
- [5] Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01): : 394 - 398
- [6] SCANNING CAPACITANCE MICROSCOPY [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1988, 21 (02): : 147 - 151
- [8] To Reveal Invisible Doping Defect by Nanoprobing Analysis, Scanning Capacitance Microscopy and Simulation [J]. ISTFA 2017: CONFERENCE PROCEEDINGS FROM THE 43RD INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2017, : 437 - 445
- [10] Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM) [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 301 - 304