Role of interface imperfections on intervalley coupling in GaAs/AlAs superlattices

被引:14
|
作者
Menchero, JG [1 ]
Koiller, B [1 ]
Capaz, RB [1 ]
机构
[1] Fed Univ Rio De Janeiro, Inst Fis, BR-21945970 Rio De Janeiro, Brazil
关键词
D O I
10.1103/PhysRevLett.83.2034
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a systematic study of the intervalley couplings Gamma-X-1z, Gamma-X-3z, X-1x-X-1y, and X-3x-X-3y in GaAs/AlAs superlattices using the tight-binding formalism. We find that a Gamma-X-1z coupling is obtained by a modification of the first-neighbor hopping at the interface. All four couplings scale inversely with the superlattice period, in agreement with experiment. We calculate the effect of interface alloying on the couplings, considering both even and odd monolayer numbers for GaAs and AlAs. Remarkably, all intervalley couplings are independent of the degree of interface alloying when averaged over the four possible even/odd configurations.
引用
收藏
页码:2034 / 2037
页数:4
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