High-performance oxide-confined GaAs VCSEL's

We present GaAs based selectively oxidized VCSEL's with record high 57% wallplug efficiencies emitting in the 820-860-nm wavelength regime, Solid source molecular beam epitaxy with carbon as p-type dopant is used for crystal growth, Multimode devices show continuous-wave (CW) output powers up to 42 mW and stable operation from -80 degrees C up to +185 degrees C. Efficient single-mode output power of some milliwatts is maximized by controlling optical waveguiding that depends on the position of the 30-nm thin oxide aperture, Elliptically shaped current apertures are applied to stabilize output polarization.