Energy-band structure and optical gain in strained lnAs(N)/GaSb/lnAs(N) quantum well lasers.

被引：18

作者：

Ridene, S. ^{[1
,3
]}

Debbichi, M. ^{[2
]}

Ben fredj, A. ^{[2
]}

Said, M. ^{[2
]}

Bouchriha, H. ^{[1
]}

机构：

[1] Univ Tunis el Manar, Fac Sci Tunis, Dept Phys, Unite Rech Phys Quant & Photon, Tunis 1060, Tunisia

[2] Fac Sci Monastir, Dept Phys, Unite Rech Phys Solides, Monastir 5019, Tunisia

[3] Univ 7 Novembre Carthage, Fac Sci Bizerte, Dept Phys, Zarzouna 7021, Bizerte, Tunisia

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 06期

关键词：

D O I：

10.1063/1.2977677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a theoretical study of band structure and optical gain spectra of dilute-N InAsN/GaSb/InAsN and the similar N-free InAs/GaSb/InAs laser structures, which have a "W" band alignment. Calculations are based on a 10X10 k center dot p model incorporating valence, conduction, and nitrogen-induced bands. The two laser diodes are designed to operate at 3.3 mu m at room temperature. We find that the incorporation of a few percent of nitrogen in the laser active region improves optical gain performance, which leads to a peak gain value of approximately 1000 cm(-1) for a typical injection carrier concentration of 1 X 10(12) cm(-2) and a carrier transparent density of 0.54 X 10(18) cm(-3). (C) 2008 American Institute of Physics. [DOI 10.1063/1.2977677]

引用

页数：6

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