Optimization of thickness in electron blocking layer of AlGaN-based deep ultraviolet laser diodes

The optimal thickness of the electron blocking layer for AlGaN-based deep ultraviolet laser diodes is reported. By comparing the performance of laser diodes with different thicknesses of electron blocking layer such as 4 nm, nm, 6 nm, 10 nm, and 15 nm, it is found that the electron blocking ability is the strongest, when the thickness of the electron blocking layer set as 5 nm, the reason is that the electron concentration in the p-side is the lowest. Moreover, the laser has a threshold current of 20.62 mA, a threshold voltage of 4.54 V, a slope efficiency of 2.09 W/A.