Synthesis of nanostructured SiC using the pulsed laser deposition technique

被引：32
|
作者：
Zhang, H. X. [1 ,2 ]
Feng, P. X. [1 ,2 ]
Makarov, V. [2 ,3 ]
Weiner, B. R. [2 ,3 ]
Morell, G. [1 ,2 ]
机构：
[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
[2] Univ Puerto Rico, Inst Funct Nanomat, San Juan, PR 00931 USA
[3] Univ Puerto Rico, Dept Chem, San Juan, PR 00931 USA
来源：
MATERIALS RESEARCH BULLETIN | 2009年 / 44卷 / 01期
关键词：
Nanostructures; Laser deposition; Raman spectroscopy; Crystal structure; NANORODS;
D O I：
10.1016/j.materresbull.2008.03.020
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy. and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased. while the material structure evolved from amorphous to crystalline. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：184 / 188
页数：5
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