A shallow-etched multilayer grating-based wavelength demultiplexer in SOI

被引：0
|
作者：
Bisaillon, E [1 ]
Laniel, J [1 ]
Jugessur, A [1 ]
Kirk, AG [1 ]
机构：
[1] McGill Univ, Montreal, PQ H3A 2A7, Canada
来源：
2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A very shallow multilayer etched-grating is proposed as a wavelength demultiplexer. Two different configurations are compared for diffraction efficiency and resolution. Single-step-etch fabrication designs are presented and modeled for their grating efficiency and overall performance.
引用
收藏
页码：595 / 596
页数：2
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