Au-assisted electroless etching of silicon in aqueous HF/H2O2 solution

被引：51

作者：

Megouda, Nacera ^{[2
]}

Hadjersi, Toufik ^{[1
]}

Piret, Gaelle ^{[3
]}

Boukherroub, Rabah ^{[3
,4
]}

Elkechai, Omar ^{[2
,4
]}

机构：

[1] UDTS, Algiers, Algeria

[2] Univ Mouloud Mammeri, Fac Sci, Tizi Ouzou, Algeria

[3] IEMN, CNRS 8520, F-59652 Villeneuve Dascq, France

[4] IRI, USR 3078, F-59652 Villeneuve Dascq, France

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 12期

关键词：

Silicon nanostructures; Silicon nanowires; Electroless etching; POROUS SILICON; METAL PARTICLES; PHOTOLUMINESCENCE; FABRICATION; SI; NANOWIRES;

D O I：

10.1016/j.apsusc.2009.01.075

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Au-assisted electroless etching of p-type silicon substrate in HF/H2O2 solution at 50 degrees C was investigated. The dependence of the crystallographic orientation, the concentration of etching solution and the silicon resistivity on morphology of etched layer was studied. The layers formed on silicon were investigated by scanning electron microscopy (SEM). It was demonstrated that although the deposited Au on silicon is a continuous film, it can produce a layer of silicon nanowires or macropores depending on the used solution concentration. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：6210 / 6216

页数：7

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