Current-polarity characteristics in breakdown of the integer quantum Hall effect in GaAs/AlGaAs heterostructures

被引：3

作者：

Morita, K ^{[1
]}

Nomura, S ^{[1
]}

Tanaka, H ^{[1
]}

Kawashima, H ^{[1
]}

Kawaji, S ^{[1
]}

机构：

[1] Gakushuin Univ, Dept Phys, Toshima Ku, Tokyo 1718588, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期

关键词：

quantum Hall effect; strong magnetic fields; breakdown of IQHE;

D O I：

10.1016/S1386-9477(01)00268-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Current-polarity dependence has been examined on the quantum Hall effect breakdown in two types of Hall bars with voltage probes asymmetrically located to the source and the drain-electrode. Polarity-dependent asymmetry observed in the critical breakdown currents is not larger than 1.3. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：169 / 172

页数：4

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