6-18GHz 13W Reactive Matched GaN Power Amplifier MMIC

被引：0

作者：

Tao, Hong-Qi ^{[1
]}

Hong, Wei ^{[1
]}

Zhang, Bin ^{[2
]}

机构：

[1] Southeast Univ, State Key Lab Millimeter Wave, Nanjing 210096, Jiangsu, Peoples R China

[2] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated & Modules Lab, Nanjing 210016, Jiangsu, Peoples R China

来源：

2017 12TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2017年

关键词：

DISTRIBUTED-AMPLIFIER; GHZ;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and performance of a compact 6-18GHz power amplifier MMIC utilizing 0.2 mu m gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. An output power of 41.4 dBm to 43.3 dBm (average 42.3dBm) with over 16 dB power gain and a power added efficiency (PAE) of 21% to 35% over the band of 6-18 GHz under a drain voltage of 28 V in CW mode have been achieved. The chip size is compact with the size of 2.6 x 3.6 mm(2) and it delivers an average output power density 1.83 W/mm(2) over the chip area. The thermal resistance is 1.55 degrees C/W measured in CW mode.

引用

页码：357 / 360

页数：4

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