Structural and Electrical Properties of Al-Doped ZnO and Al, B-Codoped ZnO Films Deposited on Flexible Substrate

To investigate effect of addictive B atom in ZnO transparent conductive oxidation (TCO) film, TCO films of thickness of 300 nm of Al-doped ZnO (AZO) and Al-, B-codoped ZnO (AZOB) were deposited on flexible substrate by using a DC-sputtering method. As the doping materials were modified, the structural and the electrical properties of the thin films were investigated. Surface electrical measurements (SEM) and X-ray diffraction (XRD) suggested that varying the doping materials affect the structure and the crystallization of the TCO thin films. Electrical and photonic property analysis of fabricated thin films was performed by 4-probe resistivity system and UV-visible spectrometer. All the films were exhibited preferred orientation of wurtzite of bulk ZnO (002) plane. The resistivity of the AZOB thin film was 1.84 x 10(-3) Omega-cm and transmission was over 80 % in visible range of the deposited thin films on a PC. These results suggest that the presence of additional boron impurity lead to improve structural defects.