Ohmic contacts on diamond by rf sputtering and Ti-Au metallization

被引：4
|
作者：
Wang, YY [1 ]
Zhen, CM
Yan, ZJ
Guo, QF
Chen, GH
机构：
[1] Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China
[2] Beijing Polytech Univ, Sch Med, Beijing 100022, Peoples R China
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 6-7期
关键词：
D O I：
10.1142/S0217979202010634
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low resistance ohmic contacts were fabricated on diamond films. A high boron concentration (similar to10(20)cm(-3)) was obtained on the surface by ion implantation. The initial film of Ti (20nm) followed by An (100nm) was deposited by r. f. sputtering. I-V measurements showed that the as-deposited contacts were ohmic. Upon annealing, the ohmic characteristics of the contacts were improved significantly, The specific contacts resistivity decreased from 6.2x10(-3) to 1.2x10(-6)Omegacm(2) as a result of post-deposition annealing. The X-ray photoelectron spectroscopy analysis indicated the formation of titanium carbide at die Ti/diamond interface in the as-deposited and annealed states. A low oxygen concentration was observed.
引用
收藏
页码：927 / 931
页数：5
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