Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(100)

被引：12

作者：

Lebedev, Mikhail V. ^{[1
]}

Ikeda, Katsuyoshi ^{[2
,3
,4
]}

Noguchi, Hidenori ^{[2
,3
,4
,5
]}

Abe, Yusuke ^{[2
]}

Uosaki, Kohei ^{[2
,4
,5
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Hokkaido Univ, Grad Sch Sci, Div Chem, Sapporo, Hokkaido 0600810, Japan

[3] Japan Sci & Technol Agcy JST, PRESTO, Kawaguchi, Saitama 3320012, Japan

[4] Natl Inst Mat Sci, Global Res Ctr Environm & Energy Based Nanomat Sc, Tsukuba, Ibaraki 3050044, Japan

[5] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED SURFACE SCIENCE | 2013年 / 267卷

基金：

日本学术振兴会; 日本科学技术振兴机构; 俄罗斯基础研究基金会;

关键词：

GaAs; Sulfur passivation; Surface recombination; Semiconductor/solution interface; Ammonium sulfide; Solvent effect; SCANNING-TUNNELING-MICROSCOPY; SULFUR PASSIVATION; ELECTROLYTE INTERFACES; FACET-PASSIVATION; LASER-DIODES; GAAS; RECOMBINATION; SPECTROSCOPY; REACTIVITY; PROBE;

D O I：

10.1016/j.apsusc.2012.09.076

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The ultrafast carrier dynamics of GaAs(1 0 0) surfaces passivated with different sulfide solutions is studied by time-resolved measurements of infrared absorption using the femtosecond visible-pump infrared-probe technique. After passivation of n-GaAs(1 0 0) surface with the solution of ammonium sulfide in 2-propanol the three-fold decrease of the surface recombination velocity is observed. The treatment of the n-GaAs(1 0 0) surface with the aqueous sulfide solution has a smaller impact on the surface recombination velocity. The different effect of aqueous and alcoholic sulfide solutions on the efficiency of surface passivation is caused by the different mechanisms of charge transfer at the semiconductor/solution interfaces. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：185 / 188

页数：4

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