A New Fully Integrated High Frequency Full-Wave Rectifier Realization

被引:0
|
作者
Basak, Muhammed Emin [1 ]
Kacar, Firat [2 ]
机构
[1] Yildiz Tech Univ, Fac Naval Architecture & Maritime, Istanbul, Turkey
[2] Istanbul Univ, Dept Elect & Elect, Istanbul, Turkey
关键词
CMOS; full-wave rectifier; high frequency; floating current source; precision rectifier; TRANSCONDUCTANCE AMPLIFIER; CURRENT CONVEYOR;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a new fully integrated high frequency precise full-wave rectifier which consists of a floating current source (FCS) and four complementary MOS transistors is presented. The presented circuit has an appropriate zero crossing performance, linearity, low component count, and can be adapted to modern IC technologies. It is also suitable for monolithic integrated implementation. Rectifier performance is simulated based on 0.18 mu m CMOS technology. The proposed full-wave rectifier circuit provides an operating frequency more than 1 GHz, produces an input operating range from -300 mV to 300 mV and its power consumption is 825 mu W. LTSPICE simulation results of the circuit are presented which verify the workability of the proposed circuit. Noise analysis is also performed. The equivalent output noise of voltage mode rectifier at the 100 MHz is found as 7.13 nV root Hz. It also exhibits good temperature stability. The presented circuit does not require any passive component; therefore it is suitable for integrated circuit implementation. The proposed circuit exhibits the high frequency operation, the lower power consumption and has the simplest structure compared to all other available works.
引用
收藏
页码:101 / 109
页数:9
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