Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method

被引：2

作者：

Ristic, Davor ^{[2
]}

Ivanda, Mile ^{[1
]}

Furic, Kresimir ^{[1
]}

Chiasera, Alessandro ^{[2
]}

Moser, Enrico ^{[3
]}

Ferrari, Maurizio ^{[2
]}

机构：

[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[2] CNR, IFN, CSMFO Lab, I-38123 Povo, Italy

[3] Univ Trento, Dept Phys, Nanosci Lab, I-38123 Povo, Italy

来源：

CROATICA CHEMICA ACTA | 2012年 / 85卷 / 01期

关键词：

LPCVD; silicon; thermal decomposition; thin films; RAMAN-SPECTROSCOPY;

D O I：

10.5562/cca1969

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 degrees C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 degrees C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy. (doi: 10.5562/cca1969)

引用

页码：91 / 96

页数：6

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