Enhancement of the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As

被引：13
|
作者：
Wang HaiLong [1 ]
Chen Lin [1 ]
Zhao JianHua [1 ]
机构：
[1] Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China
来源：
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2013年 / 56卷 / 01期
基金：
中国国家自然科学基金;
关键词：
magnetic semiconductors; magnetic properties of nanostructures; magnetotransport phenomena; molecular-beam epitaxy; THIN-FILMS; GAAS; MAGNETIZATION; MN; MANIPULATION; GA1-XMNXAS; MAGNETISM; GAMNAS; (GA;
D O I：
10.1007/s11433-012-4959-3
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this review article, we review the progress made in the past several years mainly regarding the efforts devoted to increasing the Curie temperature (T (C)) of (Ga,Mn)As, which is most widely considered as the prototype ferromagnetic semiconductor. Heavy Mn doping, nanostructure engineering and post-growth annealing which increase T (C) are described in detail.
引用
收藏
页码：99 / 110
页数：12
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