Influence of RF power and fluorine doping on the properties of sputtered ITO thin films

被引：10
|
作者：
Nisha, M. [1 ]
Jayaraj, M. K. [1 ]
机构：
[1] Cochin Univ Sci & Technol, Dept Phys, Optoelect Devices Lab, Cochin 682022, Kerala, India
来源：
APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 05期
关键词：
Transparent conducting oxides; Indium tin oxide; RF magnetron sputtering;
D O I：
10.1016/j.apsusc.2008.06.019
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Highly transparent and conducting ITO thin films were deposited at room temperature by RF magnetron sputtering of ITO target (95 wt% In2O3 and 5 wt% SnO2) in pure argon atmosphere. Films were deposited at target to substrate spacing of 2 cm and 4 cm. The influences of RF power on the structural, electrical and optical properties of the films were investigated. The influence of fluorine incorporation on the structural and electrical properties of the films was also investigated. Enhancement of crystallinity and conductivity was observed with increase in RF power. Film deposited on glass substrates at an RF power of 50W was oriented in the (1 0 0) direction and it showed a minimum resistivity of 1.27 x 10 (3) Omega cm. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码：1790 / 1795
页数：6
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