Three-dimensional silicon micromachining

被引：20

作者：

Azimi, S. ^{[1
]}

Song, J. ^{[1
]}

Dang, Z. Y. ^{[1
]}

Liang, H. D. ^{[1
]}

Breese, M. B. H. ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Dept Phys, CIBA, Singapore 117542, Singapore

[2] Natl Univ Singapore, SSLS, Singapore 117603, Singapore

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2012年 / 22卷 / 11期

关键词：

FABRICATION; ROUGHNESS; IRRADIATION; PERFORMANCE; HOLOGRAPHY;

D O I：

10.1088/0960-1317/22/11/113001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A process for fabricating arbitrary-shaped, two-and three-dimensional silicon and porous silicon components has been developed, based on high-energy ion irradiation, such as 250 keV to 1 MeV protons and helium. Irradiation alters the hole current flow during subsequent electrochemical anodization, allowing the anodization rate to be slowed or stopped for low/high fluences. For moderate fluences the anodization rate is selectively stopped only at depths corresponding to the high defect density at the end of ion range, allowing true three-dimensional silicon machining. The use of this process in fields including optics, photonics, holography and nanoscale depth machining is reviewed.

引用

页数：8

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