Device-Parameter Estimation through IDDQ Signatures

被引:2
|
作者
Shintani, Michihiro [1 ]
Sato, Takashi [1 ]
机构
[1] Kyoto Univ, Sch Informat, Dept Commun & Comp Engn, Kyoto 6068501, Japan
来源
关键词
IDDQ testing; statistical leakage current analysis; Bayes' theorem; SELECTION; LEAKAGE;
D O I
10.1587/transinf.E96.D.303
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
We propose a novel technique for the estimation of device-parameters suitable for postfabrication performance compensation and adaptive delay testing, which are effective means to improve the yield and reliability of LSIs. The proposed technique is based on Bayes' theorem, in which the device-parameters of a chip, such as the threshold voltage of transistors, are estimated by current signatures obtained in a regular IDDQ testing framework. Neither additional circuit implementation nor additional measurement is required for the purpose of parameter estimation. Numerical experiments demonstrate that the proposed technique can achieve 10-mV accuracy in threshold voltage estimations.
引用
收藏
页码:303 / 313
页数:11
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