The Evaluation of the Acceleration Factor to Reliability Test

被引:0
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作者
Nica, Ovidiu-Nicolae [1 ]
机构
[1] Univ Politehn Bucuresti, Fac Elect Engn, Bucharest, Romania
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The content of this article explains some features of reliability testing with application in the field of power semiconductor devices, with emphasis on accelerated tests. For example presents the evolution of acceleration factor depending on the junction temperature of power semiconductor devices, in our case of power thyristors, using the HTOL model (High Temperature Operating Life - operating mode to high temperature), a model that can extend the service (normal period or useful life) of equipments, as published by Crowe and Feinberg (2). It also gives the range of temperature for the above-mentioned model can be applied with reference to the operating parameters established by the manufacturer for a power semiconductor element, in our case 20/12 SKKT module, which includes two power thyristors produced by electronic components company, SEMIKRON and graphic acceleration factor (A = t/t').
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