Ferromagnetism in epitaxial layers of gallium and indium antimonides and indium arsenide supersaturated by manganese impurity

被引：12

作者：

Danilov, Yu A. ^{[1
,2
]}

Demidov, E. S. ^{[1
]}

Drosdov, Yu N. ^{[2
]}

Lesnikov, V. P. ^{[1
]}

Podolskii, V. V. ^{[1
]}

Sapozhnikov, M. V. ^{[2
]}

Kasatkin, A. P. ^{[1
]}

机构：

[1] Nizhnii Novgorod State Univ, Nizhnii Novgorod 603950, Russia

[2] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 300卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

Supersaturated semiconductors; Ferromagnetism; Epitaxial films; Kerr effect; Anomalous Hall effect; Ferromagnetic resonance; 3d impurities;

D O I：

10.1016/j.jmmm.2005.10.141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on laser synthesis of thin 30-200 nm epitaxial layers with mosaic structure of diluted magnetic semiconductors GaSb:Mn and InSb:Mn with the Curie temperature T-C above 500 K and of InAs: Mn with T-C no less than 77 K. The concentration of Mn was ranged from 0.02 to 0.15. In the case of InSb: Mn and InAs: Mn films, the additional pulse laser annealing was needed to achieve ferromagnetic behavior. We used Kerr and Hall effects methods as well as ferromagnetic resonance (FMR) spectroscopy to study magnetic properties of the samples. The anisotropy FMR was observed for both layers of GaSb: Mn and InSb: Mn up to 500 K but it takes place with different temperature dependencies of absorption spectra peaks. The resonance field value and amplitude of FMR signal on the temperature is monotonically decreased with the temperature increase for InSb: Mn. In the case of GaSb: Mn, this dependence is not monotonic. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：E24 / E27

页数：4

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