Effect of Ba-dopant on dielectric and energy storage properties of PLZST antiferroelectric ceramics

(Pb0.94-xBaxLa0.04)[(Zr0.7Sn0.3)(0.88)Ti0.12](x=0, 0.02, 0.04, 0.06) were fabricated and the effect of Ba content on the dielectric and energy storage properties was studied. The Ba dopant will weaken the stability of AFE phase and thus lower the transition field. As a result, the recoverable energy density declines while the hysteresis loop will be slimmer. Also, the Curie temperature will decrease with increasing Ba content but the maximum dielectric constant increases. The temperature dependence of the energy storage properties and dielectric tunability when x=0.06 were studied. The stored and recoverable energy density both decline but the efficiency increases with temperature rise. The dielectric tunability is promising when x=0.06 at 20 degrees C but soon becomes weaker at 80 degrees C.