A novel and simple fabrication technology for high power module with enhanced thermal performance

被引:0
|
作者
Byun, Younghun [1 ]
Jeong, Changmo [1 ]
Yoon, Jeong-Won [1 ]
Kim, Che-Heung [1 ]
Kim, Chang-Sik [1 ]
Lee, Baik-Woo [2 ]
Booh, SeongWoon
Chung, U-In [1 ]
机构
[1] Samsung Adv Inst Technol, Power Ctr, Samsung Elect, San 14, Yongin 446712, Gyeonggi Do, South Korea
[2] Samsung Adv Inst Technol, R&D Solut Grp, Samsung Elect, Suwon 443742, Gyeonggi Do, South Korea
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel packaging method for high power modules based on one-step sintering process using a proper jig and nano silver paste is described. First, using Ansoft Q3D Extractor, electromagnetic simulation is carried out to design the best chip array and DC bus connection, which giving the lowest stray inductance. A die-bonder is used for a precise die attachment, which provides high placement accuracy (<25 mu m). One step sintering process between Si chip to DBC and DBC to baseplate was established under a low temperature (<260 degrees C) and low pressure (<10 MPa). In addition, the relation of the porosity and pressure on the adhesion of sintered silver layers was investigated. Finally, thermal performance of the proposed package and cooling is then evaluated with both FEA (finite element analysis) simulation and experiments. The simulation and experimental results, which show the lowest value (<0.09 degrees C/W) of thermal resistance of junction to fluid, agree well.
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页码:1070 / 1073
页数:4
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