Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon

被引：46

作者：

Ishikawa, M. ^{[1
]}

Sugiyama, H. ^{[1
]}

Inokuchi, T. ^{[1
]}

Hamaya, K. ^{[2
]}

Saito, Y. ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan

[2] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 25期

关键词：

INJECTION; POLARIZATION; METAL;

D O I：

10.1063/1.4728117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show direct evidence for importance of the interface resistance to electrically create large spin accumulation in silicon (Si). With increasing the thickness of the tunnel barrier in CoFe/MgO/n(+)-Si devices, a marked enhancement of spin accumulation signals can be observed in the electrical Hanle-effect measurements. To demonstrate room-temperature detection of the spin signals in three-terminal methods, the influence of the spin absorption from Si into CoFe through a tunnel barrier should be taken into account. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4728117]

引用

页数：4

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