Interaction between Antimony Atoms and Micropores in Silicon

被引：0

作者：

Odzhaev, V. B. ^{[1
]}

Petlitskii, A. N. ^{[2
]}

Plebanovich, V. I. ^{[3
]}

Sadovskii, P. K. ^{[1
]}

Tarasik, M. I. ^{[1
]}

Chelyadinskii, A. R. ^{[1
]}

机构：

[1] Belarusian State Univ, Minsk 220030, BELARUS

[2] Integral, Minsk, BELARUS

[3] Planar, Minsk, BELARUS

来源：

PHYSICS OF THE SOLID STATE | 2018年 / 60卷 / 01期

关键词：

CAVITIES; IMPLANTATION; DIFFUSION; DEFECTS;

D O I：

10.1134/S1063783418010158

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interaction between Sb atoms and micropores of a getter layer in silicon is studied. The getter layer was obtained via implantation of Sb+ ions into silicon and subsequent heat treatment processes. The antimony atoms located in the vicinity of micropores are captured by micropores during gettering annealing and lose its electrical activity. The activation energy of capture process to the pores for antimony is lower than that of antimony diffusion in silicon deformation fields around microvoids on the diffusion process.

引用

页码：20 / 22

页数：3

共 50 条

[1] Interaction between antimony atoms and micropores in silicon
V. B. Odzhaev
A. N. Petlitskii
V. I. Plebanovich
P. K. Sadovskii
M. I. Tarasik
A. R. Chelyadinskii
Physics of the Solid State, 2018, 60 : 20 - 22
[2] Defect interaction mechanisms between antimony and indium in silicon
De Souza, MM
Chakravarthi, S
Jain, A
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 2005, 108-109 : 425 - 430
[3] INTERACTION BETWEEN VACANCIES AND IMPURITY IRON ATOMS IN SILICON
BENDIK, NT
MILEVSKII, LS
DOKLADY AKADEMII NAUK SSSR, 1970, 195 (01): : 107 - +
[4] Interaction Between Gold and Antimony in Solid Solutions of Germanium and Silicon.
Zemskov, V.S.
Belokurova, I.N.
Dobychina, L.D.
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy, 1976, 12 (12): : 2134 - 2137
[5] INTERACTION BETWEEN B ATOMS AND DEFECTS PRODUCED BY HG BOMBARDEMENT IN SILICON
DELLAMEA, G
DRIGO, AV
MAZZOLDI, P
NARDELLI, G
ZANNONI, R
APPLIED PHYSICS LETTERS, 1970, 16 (10) : 382 - &
[6] Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon
Saparniyazova, Z. M.
Bakhadyrkhanov, M. K.
Sattarov, O. E.
Iliev, Kh M.
Ismailov, K. A.
Norkulov, N.
Asanov, D. Zh
INORGANIC MATERIALS, 2012, 48 (04) : 325 - 328
[7] First principles calculation of interaction between nitrogen atoms and vacancies in silicon
Sawada, H.
Kawakami, K.
Nippon Steel Technical Report, 2001, (83): : 37 - 41
[8] Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon
Z. M. Saparniyazova
M. K. Bakhadyrkhanov
O. E. Sattarov
Kh. M. Iliev
K. A. Ismailov
N. Norkulov
D. Zh. Asanov
Inorganic Materials, 2012, 48 : 325 - 328
[9] Interaction between implanted fluorine atoms and point defects in preamorphized silicon
Impellizzeri, G
dos Santos, JHR
Mirabella, S
Napolitani, E
Carnera, A
Priolo, F
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 230 : 220 - 224
[10] The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms
Iliev, Kh. M.
Koveshnikov, S. V.
Isakov, B. O.
Kosbergenov, E. Zh.
Kushiev, G. A.
Khudoynazarov, Z. B.
SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY, 2024, 60 (04) : 633 - 639

← 1 2 3 4 5 →