Electronic Properties of Silicene: Insights from First-Principles Modelling

被引:8
|
作者
Houssa, M. [1 ]
Pourtois, G. [2 ]
Heyns, M. M. [2 ,3 ]
Afanas'ev, V. V. [1 ]
Stesmans, A. [1 ]
机构
[1] Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium
[2] IMEC, B-3001 Louvain, Belgium
[3] Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium
来源
关键词
D O I
10.1149/1.3481605
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The electronic properties of two-dimensional hexagonal silicon (silicene) are investigated using first-principles simulations. Though silicene is predicted to be a gapless semiconductor, due to the sp(2)-hybridization of the Si atoms, the weak overlapping between their 3 pz orbitals leads to a very reactive surface, resulting in a more energetically stable semiconducting surface upon the adsorption of foreign chemical species. It is predicted that silicene inserted into a graphite-like lattice, like ultrathin AlN stacks, preserves its sp(2)-hybridization, and hence its graphene-like electronic properties.
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页码:185 / 193
页数:9
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