Edge State-Induced Novel Electronic Structures and Magnetic Properties of Zigzag AlN/SiC Nanoribbons

被引:0
|
作者
Du, Xiu-Juan [1 ]
Zhang, Zheng-Wei [2 ]
Duan, Ying-Ni [3 ]
Song, Yu-Ling [4 ]
机构
[1] Taiyuan Univ Sci & Technol, Sch Appl Sci, Taiyuan 030024, Shanxi, Peoples R China
[2] Chinese Acad Sci, Chem & Chem Engn Lab, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Xinjiang, Peoples R China
[3] Xinjiang Med Univ, Dept Med Engn & Technol, Urumqi 830011, Xinjiang, Peoples R China
[4] Nanyang Normal Univ, Coll Phys & Elect Engn, Nanyang 473061, Henan, Peoples R China
关键词
AlN/SiC nanoribbon; Electronic structure; Magnetic properties; First-principle study; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; ALN NANORIBBON; 1ST-PRINCIPLES; NANOBELTS; METALS;
D O I
10.1007/s10948-015-3131-5
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using first-principle calculations based on density functional theory, we investigate the electronic structures and magnetic properties of zigzag AlN/SiC nanoribbons. Bare N edge can cause the redistribution of the magnetic moment of the whole nanoribbon, whereas bare Si edge only has a certain effect on the magnetic moment of Si-C chain. The magnetic moment of the nanoribbon with bare Si and N edges is slightly larger than the summation of the magnetic moments of the nanoribbon with bare Si edge and nanoribbon with bare N edge. Bare N edge has a main contribution on the band gap of the corresponding nanoribbons.
引用
收藏
页码:3053 / 3057
页数:5
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