Adsorption of boron on a Mo(110) surface

Adsorption of boron atoms in submonolayer to multilayer coverage on atomically clean Mo(110) surfaces has been studied by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS) and work function measurements. According to Auger results there is a layer-by-layer growth mode of the film on the substrate held at room temperature. In the submonolayer region the work function gradually increases with boron coverage until a saturation value of 5.8 eV is achieved after completion of the first monoatomic layer. The B-Mo(110) adsorbate system formed on the substrate at room temperature is not stable, dominated by a strong tendency of the boron atoms to diffuse into the bulk of the crystal. The latter is manifested by dramatic Mo(110) surface plasmon mode transformation upon boron adsorption, presumably as a result of penetration of boron atoms into the topmost substrate layer even at T = 300 K. Slight annealing up to 450 K facilitates this trend, leading to total dissolution of deposited boron atoms in the bulk of the crystal under further annealing, restoring the initial state of the Mo(110) surface after achieving a temperature of approximately 2000 K.