KTa0.5Nb0.5O3 ferroelectric thin films grown by pulsed laser deposition:: structural characteristics and applications to microwave devices

被引：4
|
作者：
Moussavou, A. -G. [1 ,2 ]
Deputier, S. [1 ]
Perrin, A. [1 ]
Sauleau, R. [2 ]
Castel, X. [2 ]
Legeay, G. [2 ]
Benzerga, R. [2 ]
Mahdjoubi, K. [2 ]
Guilloux-Viry, M. [1 ]
机构：
[1] Univ Rennes 1, CNRS, UMR 6226, Campus Beaulieu,Ave Gen Leclerc, F-35042 Rennes, France
[2] Univ Rennes 1, CNRS, UMR 6164, IETR, F-35042 Rennes, France
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 10 | 2008年 / 5卷 / 10期
关键词：
D O I：
10.1002/pssc.200779514
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, we report on KTN ferroelectric thin films grown by Pulsed Laser Deposition on various substrates suitable for microwave applications and the agility of CPW stub resonators operating in X-band printed on these films. The ferroelectric material selected here is KTa0.5Nb0.5O3 (KTN). X-ray characterizations and scanning electron microscopy revealed an epitaxial growth on MgO and LaAlO3 substrates, while films deposited on sapphire were textured. Measurements have demonstrated a tunability reaching 5% for KTN/sapphire and 1% for KTN/MgO-LaAlO3. The resonators have also been characterized in terms of quality factor. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3298 / +
页数：2
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