Thin film growth of CaAgAs by molecular beam epitaxy

被引：2

作者：

Hatano, T. ^{[1
]}

Nakamura, I ^{[1
]}

Ohta, S. ^{[1
]}

Tomizawa, Y. ^{[1
]}

Urata, T. ^{[1
]}

Iida, K. ^{[1
]}

Ikuta, H. ^{[1
]}

机构：

[1] Nagoya Univ, Dept Mat Phys, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2020年 / 32卷 / 43期

基金：

日本学术振兴会;

关键词：

topological insulator; weak antilocalization; molecular beam epitaxy;

D O I：

10.1088/1361-648X/aba6a7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have grown thin films of CaAgAs by molecular beam epitaxy, which was theoretically proposed to be a topological insulator. The temperature dependence of resistivity and the carrier concentration at 4 K were similar to the reported results of bulk samples. However, the magnetoresistance exhibited a steep increase at low magnetic fields, a behavior not observed for bulk samples. This steep increase of resistivity is ascribable to the weak antilocalization effect and provides clues to the nature of the topological surface state of CaAgAs.

引用

页数：6

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