Characteristics of PZT films with SRO/PT stack electrodes for high density MBIT feram devices

被引：0
|
作者：
Yamakawa, K
Arisumi, O
Imai, K
Natori, K
Kanaya, H
Kunishima, I
Arikado, T
机构：
[1] Toshiba Co Ltd, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358523, Japan
[2] Toshiba Co Ltd, Semicond Co, Mem LSI Res & Dev Ctr, Isogo Ku, Yokohama, Kanagawa 2358523, Japan
来源：
INTEGRATED FERROELECTRICS | 2001年 / 39卷 / 1-4期
关键词：
PZT; sputtering; SRO; interface; electrode; crystallization;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reliable PZT capacitors have been developed by using stable PZT sputtering technique and Pt/thinSRO(SrRuO3) stack electrodes. Introduction of SRO electrodes with no leakage current degradation is a key to realize reliable and scalable PZT capacitors. Roles of top electrode (TE) SRO and bottom electrode (BE) SRO were investigated respectively from reliability and process damage points of view. The SRO works as hydrogen resistant electrodes, fatigue free interfaces and nucleation sites for perovskite formation. Relationship between SRO crystallinity and PZT electrical properties was elucidated. Templates made of thin SRO were found to function as barrier layers against diffusion of Pb and Ru from BE resulting in new possible cell structures.
引用
收藏
页码：981 / 990
页数：10
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