An ultra-wideband 0.18μm SiGeBiCMOS LNA for 3.1 GHz to 10.6 GHz wireless receivers

Ultra wideband (UWB) radio emerges as a very promising wireless communication technology due to its many advantages: i.e., 7.5GHz spectrum bandwidth, very high data rate, very low power consumption, etc. This paper presents a fully integrated 3.1-10.6GHz low-noise amplifier (LNA) designed for UWB applications. The LNA uses shunt-series feedback topology architecture to achieve desirable ultra broadband gain and noise performance. The LNA is implemented in a commercial 0.18 mu m SiGe BiCMOS process and the measured specifications are: an adequate ultra broadband gain of 17.4dB-7.1dB, a low noise figure (NF) of 3.2dB-5.5dB across 3.1-10.6GHz bandwidth, a very low DC power consumption of less than 10mW at 3V supply, S11 of less than -6dB, and S22 of less than -5dB.