Spin Hall angle quantification from spin pumping and microwave photoresistance

被引:137
|
作者
Feng, Z. [1 ,2 ]
Hu, J. [1 ,2 ]
Sun, L. [1 ,2 ]
You, B. [1 ,2 ]
Wu, D. [1 ,2 ]
Du, J. [1 ,2 ]
Zhang, W. [1 ,2 ]
Hu, A. [1 ,2 ]
Yang, Y. [3 ]
Tang, D. M. [3 ]
Zhang, B. S. [3 ]
Ding, H. F. [1 ,2 ]
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
来源
PHYSICAL REVIEW B | 2012年 / 85卷 / 21期
关键词
CHARGE;
D O I
10.1103/PhysRevB.85.214423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a method to quantify the spin Hall angle (SHA) with spin pumping and microwave photoresistance measurements. With this method we separate the inverse spin Hall effect (ISHE) from other unwanted effects for permalloy/Pt bilayers using out-of-plane microwave excitation. Through microwave photoresistance measurements, the in-and out-of-plane precessing angles of the magnetization are determined and enabled for the exact determination of the injected pure spin current. This method is demonstrated with an almost perfect Lorentz line shape for the obtained ISHE signal and the frequency independent SHA value as predicted by theory. By varying the Pt thickness, the SHA and spin-diffusion length of Pt is quantified as 0.012 +/- 0.002 and 8.3 +/- 0.9 nm, respectively.
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页数:7
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