Modeling free carrier absorption in silicon

被引：9
|
作者：
Vardanyan, R. R. [1 ]
Dallakyan, V. K. [1 ]
Kerst, U. [2 ]
Boit, C. [2 ]
机构：
[1] State Engn Univ Armenia, Yerevan, Armenia
[2] Tech Univ Berlin, Berlin, Germany
来源：
JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2012年 / 47卷 / 02期
关键词：
silicon; free carriers; absorption; wavelength; doping concentration; modeling; OPTICAL-ABSORPTION; MODULATION;
D O I：
10.3103/S1068337212020053
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The different empirical models of light absorption in silicon by free charge carriers in near-infrared and infrared regions are analyzed. An improved empirical model for free carrier absorption in silicon is developed. Results are obtained over the wavelength range from 0.9 mu m to 6 mu m for n-type, and from 0.9 mu m to 8 mu m for p-type silicon. The new model is assessed ed by R (2) parameter and the sufficient fitting of the experimental data is presented.
引用
收藏
页码：73 / 79
页数：7
相关论文
共 50 条
  • [1] Modeling free carrier absorption in silicon
    R. R. Vardanyan
    V. K. Dallakyan
    U. Kerst
    C. Boit
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2012, 47 : 73 - 79
  • [2] FREE CARRIER ABSORPTION IN SILICON
    SCHRODER, DK
    THOMAS, RN
    SWARTZ, JC
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (01) : 180 - 187
  • [3] FREE CARRIER ABSORPTION IN SILICON
    SCHRODER, DK
    THOMAS, RN
    SWARTZ, JC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) : 254 - 261
  • [4] Infrared free carrier absorption in mesoporous silicon
    Timoshenko, V.Yu.
    Dittrich, Th.
    Koch, F.
    2000, Wiley-VCH Verlag (222):
  • [5] Infrared free carrier absorption in mesoporous silicon
    Timoshenko, VY
    Dittrich, T
    Koch, F
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 222 (02): : R1 - R2
  • [6] Carrier Diffusivity Measurement in Silicon Wafers Using Free Carrier Absorption
    Zhang, Xiren
    Li, Bincheng
    INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2013, 34 (8-9) : 1721 - 1726
  • [7] Carrier Diffusivity Measurement in Silicon Wafers Using Free Carrier Absorption
    Xiren Zhang
    Bincheng Li
    International Journal of Thermophysics, 2013, 34 : 1721 - 1726
  • [8] Free charge carrier absorption in silicon at 800 nm
    P. -C. Heisel
    W. I. Ndebeka
    P. H. Neethling
    W. Paa
    E. G. Rohwer
    C. M. Steenkamp
    H. Stafast
    Applied Physics B, 2016, 122
  • [9] Free-Carrier Absorption Assisted Photoelectrochemistry of Silicon
    Lee, Benjamin T-H
    Chiang, C. C.
    Hwang, Y. R.
    SELECTED PROCEEDINGS FROM THE 232ND ECS MEETING, 2017, 80 (10): : 1113 - 1125
  • [10] PHOTOINDUCED FREE-CARRIER ABSORPTION IN MICROCRYSTALLINE SILICON
    LIU, HN
    PFOST, D
    TAUC, J
    SOLID STATE COMMUNICATIONS, 1984, 50 (11) : 987 - 990
12345