Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure

被引：14
|
作者：
Tseng, Hsueh-Chih [1 ]
Chang, Ting-Chang [1 ,2 ]
Wu, Yi-Chun [1 ]
Wu, Sei-Wei [3 ]
Huang, Jheng-Jie [1 ]
Chen, Yu-Ting [4 ]
Yang, Jyun-Bao [4 ]
Lin, Tzu-Ping [1 ]
Sze, Simon. M. [3 ]
Tsai, Ming-Jinn [5 ]
Wang, Ying-Lang [6 ]
Chu, Ann-Kuo [4 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan
[4] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan
[5] ITRI, Elect & Optoelect Res Lab, Nanoelect Technol Div, Hsinchu 31040, Taiwan
[6] Taiwan Semicond Mfg Co, Hsinchu 30077, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 07期
关键词：
Indium tin oxide (ITO); resistance switching; resistive random access memory (ReRAM); self-built current compliance;
D O I：
10.1109/LED.2013.2259135
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiOx/TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor.
引用
收藏
页码：858 / 860
页数：3
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