Scatterometry-based Defect Detection for DSA In-line Process Control

被引:3
|
作者
Chao, Robin [1 ]
Liu, Chi-Chun [1 ]
Bozdog, Cornel [2 ]
Cepler, Aron [3 ]
Sendelbach, Matthew [3 ]
Cohen, Oded [2 ]
Wolfling, Shay [2 ]
Bailey, Todd [4 ]
Felix, Nelson [1 ]
机构
[1] IBM Albany NanoTech, Albany, NY 12203 USA
[2] Nova Measuring Instruments LTD, IL-76100 Rehovot, Israel
[3] Nova Measuring Instruments Inc, San Jose, CA 95110 USA
[4] IBM Semicond Res & Dev Ctr, East Fishkill, NY 12533 USA
关键词
OCD; scatterometry; CD-SEM; DSA; defects; 1X node; imaging;
D O I
10.1117/12.2087093
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Successful implementation of directed self-assembly in high volume manufacturing is contingent upon the ability to control the new DSA-specific local defects such as "dislocations" or "line-shifts" or "fingerprint-like" defects. Conventional defect inspection tools are either limited in resolution (brightfield optical methods) or in the area / number of defects to investigate / review (SEM). Here we explore in depth a scatterometry-based technique that can bridge the gap between area throughput and detection resolution. First we establish the detection methodology for scatterometry-based defect detection, then we compare to established methodology. Careful experiments using scatterometry imaging confirm the ultimate resolution for defect detection of scatterometry-based techniques as low as <1% defect per area sampled - similar to CD-SEM based detection, while retaining a 2 orders of magnitude higher area sampling rate.
引用
收藏
页数:17
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