Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings

被引：0
|
作者：
Ben, T. [1 ]
Sanchez, A. M. [1 ]
Molina, S. I. [1 ]
Granados, D. [1 ]
Garcia, J. M. [1 ]
Kret, S. [1 ]
机构：
[1] Fac Ciencias, Dept CIencia Mat & Ingn Met & QI, Puerto Real, Cadiz, Spain
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS | 2005年 / 107卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The strain and composition distributions of InAs/GaAs(001) stacked self-assembled quantum rings (QRs) grown by MBE have been analyzed. Transmission electron microscopy (TEM) images revealed a high degree of vertical arrangement of quantum rings for samples spaced by a GaAs spacer layer thickness t(s) <= 6 nm. The peak finding method was applied to high resolution transmission electron micrographs in order to plot strain maps, revealing that the higher strained areas were in the ring core and close to it. The existence of another layer with similar strain to the wetting layer was also clear from the peak finding strain analysis. The transverse compositional profiles taken from 002 DF TEM images show the existence of In-rich regions within the nano-rings and an In(Ga)As well defined layer surrounding them, which is formed during the growth process.
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页码：271 / 274
页数：4
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