Design of Majority Logic Gate for Single-Dopant Device

被引:0
|
作者
Oya, Takahide [1 ]
Shinada, Takahiro [2 ]
机构
[1] Yokohama Natl Univ, Grad Sch Engn, Yokohama, Kanagawa, Japan
[2] Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi, Japan
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a majority logic gate circuit on a "single-dopant" device. The single-dopant device that has been receiving increasing attention in recent years is one of atomic scale solid-state device and can be a practical platform for a single-electron circuit. We here aim to fabricate actual single-dopant majority logic circuits with deterministic doping method. For this, we design a possible circuit on the device and test its operation by Monte Carlo simulation as a first step of this study. As results, we confirmed correct circuit operation and found that the device will have thermal-noise- and device-parameter-fluctuation-harnessing abilities. We believe that we will succeed to fabricate practical the single-dopant majority logic gate circuit in near future.
引用
收藏
页码:151 / 152
页数:2
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