Electrical detection of spin accumulation at a ferromagnet-semiconductor interface

被引：173
|
作者：
Lou, X [1 ]
Adelmann, C
Furis, M
Crooker, SA
Palmstrom, CJ
Crowell, PA
机构：
[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[3] Los Alamos Natl Lab, Natl High Magnet Field Lab, Los Alamos, NM 87545 USA
来源：
PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 17期
关键词：
D O I：
10.1103/PhysRevLett.96.176603
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.
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页数：4
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