Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

被引:4
|
作者
Chalker, Paul R. [1 ]
Marshall, Paul A. [1 ]
Romani, Simon [1 ]
Rosseinsky, Matthew J. [2 ]
Rushworth, Simon [3 ]
Williams, Paul A. [3 ]
Buckett, John [4 ]
McSporran, Neil [4 ]
Ridealgh, John [4 ]
机构
[1] Univ Liverpool, Mat Sci & Engn, Liverpool L69 3BX, Merseyside, England
[2] Univ Liverpool, Dept Chem, Liverpool L69 7ZD, Merseyside, England
[3] SAFC Hitech, Wirral, Merseyside CH62 3QF, England
[4] Pilkington Technol Management Ltd, Ormskrik, Lancs L40 5UF, England
关键词
D O I
10.1557/opl.2011.711
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350 degrees C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Omega/square was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm(2)/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.
引用
收藏
页码:39 / 44
页数:6
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