Storage of electrons in shallow donor excited states of GaP:Te

被引:8
|
作者
Ganichev, SD [1 ]
Raab, W [1 ]
Zepezauer, E [1 ]
Prettl, W [1 ]
Yassievich, IN [1 ]
机构
[1] RUSSIAN ACAD SCI,AF IOFFE PHYSICOTECH INST,ST PETERSBURG 194021,RUSSIA
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 15期
关键词
D O I
10.1103/PhysRevB.55.9243
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tellurium donors in GaP have been ionized by phonon-assisted tunneling in the electric field of pulsed far-infrared laser radiation. In response to the laser pulse a photoconductive signal has been detected with a fast component that follows in time the laser pulse and a slow component that rises after the irradiation has ceased and finally exponentially decays with a strongly temperature-dependent time constant varying from several microseconds to milliseconds. It is shown that this temporal structure of the signal is due to a storage of carriers in the valley-orbit split 1s(E) shallow donor state. Observation of far-infrared to mid-infrared up-conversion demonstrates that the final step of cascade recombination is achieved by radiative transitions.
引用
收藏
页码:9243 / 9246
页数:4
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