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- [1] Uniform-height island growth of Pb on Si(111)-Pb(√3x√3) at low temperatures -: art. no. 155307 PHYSICAL REVIEW B, 2001, 64 (15):
- [2] Interface relaxation and electronic corrugation in the Pb/Si(111)-Pb-α-,3X, 3 -: art. no. 193408 PHYSICAL REVIEW B, 2005, 71 (19):
- [4] Probing the Buried Pb/Si(111) Interface with SPA LEED and STM on Si(111)-Pbα√3x√3 JOURNAL OF PHYSICAL CHEMISTRY A, 2011, 115 (25): : 7096 - 7104
- [7] Tensor LEED analysis of the Ni(111)(√3x√3)R30°-Pb surface -: art. no. 233404 PHYSICAL REVIEW B, 2002, 65 (23): : 1 - 4
- [8] Evidence for valence-charge fluctuations in the √3 x √3-Pb/Si(111) system -: art. no. 155334 PHYSICAL REVIEW B, 2004, 70 (15): : 155334 - 1
- [10] Growth of thin mn films on Si(111)-7x7 and Si(111)-√3x√3:Bi -: art. no. 035431 PHYSICAL REVIEW B, 2005, 71 (03):