Modifying the Hetero-junction Interface of Cu2ZnSnSe4 Solar Cells

被引：0
|
作者：
Zhang, Yi [1 ]
Li, Jianjun [1 ]
Liu, Xiaoru [1 ]
Wu, Li [2 ]
Ao, Jianping [1 ]
Sun, Yun [1 ]
机构：
[1] Nankai Univ, Tianjin Key Lab Photoelect Thin Film Devices & Te, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China
[2] Nankai Univ, Sch Phys, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300071, Peoples R China
来源：
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
基金：
美国国家科学基金会;
关键词：
FILM;
D O I：
暂无
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
CZTSe solar cells are prepared with CBD-Zn(O, S) layer as a buffer layer. By a concentrated ammonium etching and subsequent soft annealing treatment, the detrimental ZnO and Zn(OH)(2) secondary phases are eliminated from Zn(O, S) layer, thus restraining the band fluctuation caused by secondary phases and improving the hetero-junction quality significantly. Consequently, the conversion efficiency of the Zn(O, S)/CZTSe solar cells was improved from 1.17% to a favorable value of 7.2%. The results of device analysis indicates a defects level may exists in the Zn(O, S) layer and acts as a shortcut for the transport of negative charge carrier across the Zn(O, S) layer.
引用
收藏
页码：3059 / 3061
页数：3
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