Interfacial reactions between metal thin films and p-GaN

被引：0
|
作者：
Trexler, JT [1 ]
Miller, SJ [1 ]
Holloway, PG [1 ]
Khan, MA [1 ]
机构：
[1] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：819 / 824
页数：6
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