Continuous-wave and Time-resolved Photoluminescence of GaN LED grown on amorphous SiC buffer

被引：0
|
作者：
Cheng, Chih-Hsien [1 ,2 ]
Chen, Shuai [3 ]
Wan, Lingyu [3 ]
Feng, Zhe Chuan [3 ]
Lin, Gong-Ru [1 ,2 ]
机构：
[1] NTU, Grad Inst Photon & Optoelect, 1,Sec 4,Roosevelt Rd, Taipei 10617, Taiwan
[2] NTU, Dept Elect Engn, 1,Sec 4,Roosevelt Rd, Taipei 10617, Taiwan
[3] Guangxi Univ, Coll Phys Sci & Technol, Guangxi Key Lab Relativist Astrophys, Lab Optoelect Mat & Detect Technol, Nanning 530004, Peoples R China
来源：
2016 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2016年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
GaN LED grown upon amorphous SiC buffer is demonstrated. Its PL peak is red-shifted to 442 nm because of the decreased compressive strain induced by lattice mismatch when changing the SiC buffer to C-rich condition.
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页数：3
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