Analytical model for quasi-static C-V characteristics of strained-Si/SiGe pMOS capacitor

被引：9
|
作者：
Wang, Bin [1 ]
Zhang, He-Ming [1 ]
Hu, Hui-Yong [1 ]
Shu, Bin [1 ]
Zhou, Chun-Yu [1 ]
Li, Yu-Chen [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2013年 / 79卷
关键词：
Strained-Si; pMOS capacitor; C-V characteristic; Doping concentration; HETEROJUNCTION;
D O I：
10.1016/j.sse.2012.09.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model for quasi-static C-V characteristics of strained-Si/SiGe pMOS capacitor is presented. By analyzing the model, the dependence of the C-V characteristics on the strained-Si layer thickness, doping concentration and Ge fraction is studied. Also, the reason of the shift of the plateau, observed in the gate C-V characteristics of the strained-Si pMOS capacitor, from the inversion region to the accumulation region as doping concentration increasing, has been explained. The results from the models show excellent agreement with the simulations and experimental data. The proposed models can be used to guide the design and has been implemented in the software for extracting the parameter of strained-Si MOSFET. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：258 / 261
页数：4
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