A 1-V, Low-Power CMOS LNA for Ultra-wideband Receivers

被引：0
|
作者：
Chang, Po Yang [1 ]
Wu, Hui-I [1 ]
Jou, Christina F. [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Commun Engn, Hsinchu, Taiwan
来源：
2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5 | 2007年
关键词：
CMOS; Ultra wide-band; LNA;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 1-V, low-power ultra-wideband (UWB) low-noise amplifier (LNA) for IEEE 802.153a is implemented in TSMC 0.18-mu m. mixed signal/RF CMOS process. With only 1V bias voltage, the LNA can achieve a measured flat power gain (S21) of 10dB from 2.5 to 8.5 GHz while consuming only 7.25 mW. The minimum noise figure is 3.46dB. A simplified Chebyshev filter is used to achieve an input broadband matching of a measured S11 < -7.1dB from 3.1 to 10.6 GHz. An output-matching buffer is designed specially to match for high gain at upper frequency, the measured S22 is <-12.5dB from 3.1 GHz to 10.6 GHz. Furthermore, the high frequency electromagnetic effect of the transmission lines is considered in this circuit.
引用
收藏
页码：1718 / 1721
页数：4
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