Atomic structure of the (2 x 4) In0.53Ga0.47As/InP(001) reconstructed surface.: A study of average strain and growth temperature effects on the indium segregation

被引：1

作者：

Aïd, K

Garreau, Y

Sauvage-Simkin, M

Pinchaux, R

机构：

[1] Ctr Univ Paris Sud, Utilisat Rayonnement Electromagnet Lab, F-91405 Orsay, France

[2] CNRS, Lab Mineral Cristallog, F-75252 Paris, France

[3] Univ Paris 06, F-75252 Paris, France

[4] Univ Paris 07, F-75252 Paris, France

来源：

SURFACE SCIENCE | 1999年 / 425卷 / 2-3期

关键词：

arsenic; gallium; indium; indium phosphide; molecular beam epitaxy; surface segregation; X-ray diffraction;

D O I：

10.1016/S0039-6028(99)00022-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of the average strain and the growth temperature on the surface structure of ternary alloys has been studied by depositing in situ lattice matched In0.53Ga0.47As on an InP(001)substrate by molecular beam epitaxy. Under As-rich cooling conditions, a (2 x 4) reconstruction has been observed, where a specific ordering of cation within the last (In, Ga) plane has been evidenced by in situ grazing incidence X-ray diffraction measurements. In contrast with the case of strained InxGa1-xAs layers deposited on GaAs substrates, no tendency for indium surface segregation has been detected in the top cation layer. The atomic positions in the (2 x 4) surface unit cell are fully determined. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：165 / 173

页数：9

共 26 条

[1] Atomic structure of the (2 × 4) In0.53Ga0.47As/InP(001) reconstructed surface. A study of average strain and growth temperature effects on the indium segregation
Aïd, K.
Garreau, Y.
Sauvage-Simkin, M.
Pinchaux, R.
Surface Science, 1999, 425 (02): : 165 - 173
[2] Real Space Surface Reconstructions of Decapped As-rich In0.53Ga0.47As(001)-(2x4)
Shen, Jian
Winn, Darby
Melitz, Wilhelm
Clemens, Jonathon
Kummel, Andrew C.
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6, 2008, 16 (05): : 463 - +
[3] Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 x 2 from atomic layer deposition
Pi, T. W.
Lin, T. D.
Lin, H. Y.
Chang, Y. C.
Wertheim, G. K.
Kwo, J.
Hong, M.
APPLIED PHYSICS LETTERS, 2014, 104 (04)
[4] Theoretical study on electronic and optical properties of In0.53Ga0.47As (100) β2 (2 x 4) surface
Guo, Jing
Chang, Benkang
Jin, Muchun
Yang, Mingzhu
Wang, Honggang
Wang, MeiShan
Huang, Jiacai
Zhou, Lei
Zhang, Yijun
APPLIED SURFACE SCIENCE, 2014, 288 : 238 - 243
[5] Theoretical study on the electron structure and optical properties of Cs adsorption on In0.53Ga0.47As (100) β2 (2 x 4) reconstruction surface
Yin, Lin
Chen, Liang
Zhang, Shuqin
He, Minyou
Su, Lingai
Qian, Yunshen
OPTIK, 2017, 130 : 531 - 538
[6] Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4X2) surfaces
Shen, Jian
Chagarov, Evgueni A.
Feldwinn, Darby L.
Melitz, Wilhelm
Santagata, Nancy M.
Kummel, Andrew C.
Droopad, Ravi
Passlack, Matthias
JOURNAL OF CHEMICAL PHYSICS, 2010, 133 (16):
[7] Cesium adsorption on In0.53Ga0.47As (100) β2 (2 x 4) surface: A first-principles research
Guo, Jing
Chang, Benkang
Jin, Muchun
Wang, Honggang
Wang, MeiShan
APPLIED SURFACE SCIENCE, 2015, 324 : 547 - 553
[8] Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 - A comparative study
Hong, M.
Wan, H. W.
Chang, P.
Lin, T. D.
Chang, Y. H.
Lee, W. C.
Pi, T. W.
Kwo, J.
JOURNAL OF CRYSTAL GROWTH, 2017, 477 : 159 - 163
[9] Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates
Lamagna, L.
Fusi, M.
Spiga, S.
Fanciulli, M.
Brammertz, G.
Merckling, C.
Meuris, M.
Molle, A.
MICROELECTRONIC ENGINEERING, 2011, 88 (04) : 431 - 434
[10] Study on the electronic and optical properties of zinc interstitial doped In0.53Ga0.47As (100) β2 (2 x 4) photocathode
Zou, Xiyong
Zhang, Shuqin
Chen, Liang
Jin, Shangzhong
Gan, Deqiang
OPTIK, 2018, 156 : 866 - 871

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