Fabrication and characterization of carbon nanotubes integrated on field-emission diode

被引：3
|
作者：
Tsai, J. T. H. [1 ]
Li, J. G. S. [1 ]
机构：
[1] Tatung Univ, Grad Inst Electroopt Engn, Taipei 10452, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 07期
关键词：
carbon nanotubes (CNTs); diodes; electron emission; field emission; vacuum microelectronics;
D O I：
10.1109/LED.2008.2000618
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carbon nanotubes (CNTs) deposited by electrophoresis on a free-standing thin metal film edge are demonstrated. These CNTs act as electron field emitter which Was integrated on the cathode of the field-emission vacuum diode. This diode exhibits a low reverse leakage current (< 10(-11) A) with high on-off ratio of 10(6). Owing to the low turn-on voltage of the nanosized CNTs, the field-emission diode exhibited less power consumption compared with the conventional vacuum-tube diode. Electronic tests of this vacuum diode perform its fast switching speed ability and high voltage rectification. This approach presents a route to use nanomaterials with a microelectromechanical system process to develop high-speed vacuum microelectronics.
引用
收藏
页码：691 / 693
页数：3
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